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We consider the noise performance of the DISET, and an intuitive definition of the DISET charge sensitivity suggests that under certain conditions, DISETs can have a better charge sensitivity than conventional SETS, which would be attractive for quantum limited measurements.
Finally we present the first study of a DISET operated at radio-frequencies (rf-DISET), compatible with charge detection on mus timescales.
A triple-dot single-electron transistor was fabricated on silicon-on-insulator wafer using pattern-dependent oxidation.
A specially designed one-dimensional silicon wire having small constrictions at both ends was converted to a triple-dot single-electron transistor by means of pattern-dependent oxidation.
Detection of single-electron transfer in a double-dot is also demonstrated using a double-island SET.
In addition, conductance suppression in this novel DISET detector allows the detection of electrostatically degenerate charge configurations of a double-dot, which cannot be achieved with single-island SETS.
For SET modeling and simulation, master equation method treats the electron tunneling and its transition probabilistically.
The probability of electron tunneling is used to determine the current density in accordance with selected input parameters.
A twin-SET detector is presented that consists of two independent SETs, which were used to detect controlled single electron transfers on a small, floating metal double-dot.
By cross-correlating the two SET signals, rejection of random charge noise is successfully demonstrated, thus decreasing the error probability during readout.